Molecular beam epitaxial doping of ZnMgSe using ZnCl2
نویسندگان
چکیده
منابع مشابه
Donor-doping characteristics of gas-source molecular beam epitaxial Si and Si1-xGex using phosphine
Well-behaved and reproducible n-type doping of Si and Sir -$e, by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017-10’9 cmp3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The do...
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Approved: ____________________________________ Thesis Supervisor ____________________________________ Title and Department ____________________________________ Date 1 INVESTIGATIONS INTO MOLECULAR BEAM EPITAXIAL GROWTH OF INAS/GASB SUPERLATTICES by Lee Michael Murray A thesis submitted in partial fulfillment of the requirements for the Doctor of Philosophy degree in Physics in the Graduate Coll...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1995
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.113632